Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3263-3265

  Bo, Xiang Zheng ^a   Rokhinson, Leonid P ^a   Yin, Haizhou ^a   Tsui, D C ^a   Sturm, J C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM OXIDATION; AFM TIP; COULOMB BLOCKADE OSCILLATION; ELECTRICAL DEVICES; FORM FEATURES; NANOPATTERNING; SELECTIVE WET ETCHING; SI-GE ALLOYS; SI/SIGE; SIDE GATE; SIGE LAYERS;

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; GERMANIUM; OXIDATION; SILICON ALLOYS; WET ETCHING;

SILICON OXIDES;

EID: 79956016580     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515113     Document Type: Article

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