Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Xie, X N ^a   Chung, H J ^b   Sow, C H ^b   Wee, A T S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ETCHING; OXIDES; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

DIELECTRICAL CHRACTERISTICS; DIELECTRICAL STABILITY; SCANNING ELECTRON BEAMS (SEB) TECHNIQUES; TIME-OF-FLIGHT;

ULTRATHIN FILMS;

EID: 20844446801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1901814     Document Type: Article

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