Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7733-7738

  Kim, Young Ho ^a   Zhao, Jianwei ^a   Uosaki, Kohei ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC HUMIDITY; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MICROSCOPES; MOS DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PERMITTIVITY; SCANNING; SUBSTRATES;

CURRENT SENSING ATOMIC FORCE MICROSCOPES (CSAFM); SEMICONDUCTOR SURFACES;

TANTALUM COMPOUNDS;

EID: 0346305083     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627951     Document Type: Article

References (54)

1. R. W. Carpick and M. Salmeron, Chem. Rev. (Washington, D.C.) 97, 1163 (1997).
2. R. M. Nyffenegger and R. M. Penner, Chem. Rev. (Washington, D.C.) 97, 1195 (1997).
3. H. T. Lee, S. J. Park, K. H. Park, J. S. Ha, H. J. Yoo, and J. Y. Koo, J. Vac. Sci. Technol. A 15, 1451 (1997).
4. M. Koinuma and K. Uosaki, J. Vac. Sci. Technol. B 12, 1543 (1994).
5. M. Koinuma and K. Uosaki, Eleetrochim. Acta 40, 1345 (1995).
6. G. Y. Liu, S. Xu, and Y. Qian, Acc. Chem. Res. 33, 457 (2000).
7. S. Xu, P. E. Laibinis, and G. Y. Liu, J. Am. Chem. Soc. 120, 9356 (1998).
8. N. A. Amro, S. Xu, and G. Y. Liu, Langmuir 16, 3006 (2000).
9. J. K. Schoer, F. P. Zamborini, and R. M. Crooks, J. Phys. Chem. 100, 11086 (1996).
10. C. B. Gorman, R. L. Carroll, Y. He, F. Tian, and R. Fuierer, Langmuir 16, 6312 (2000).
11. Y. T. Kim and A. J. Bard, Langmuir 8, 1096 (1992).
12. J. K. Schoer and R. M. Crooks, Langmuir 13, 2323 (1997).
13. J. Chen, M. A. Reed, C. L. Asplund, A. M. Cassell, M. L. Myrick, A. M. Rawlett, J. M. Tour, and P. G. Van Patten, Appl. Phys. Lett. 75, 624 (1999).
14. W. Mizutani, T. Ishida, and H. Tokumoto, Langmuir 14, 7197 (1998).
15. U. Gratratzke and G. Simon, Phys. Rev. B 52, 8535 (1995).
16. J. Hartwich, M. Sundermann, U. Kleineberg, and U. Heinzmann, Appl. Surf. Sci. 144-145, 538 (1999).
17. J. W. Zhao and K. Uosaki, Nano Lett. 2, 137 (2002).
18. J. W. Zhao and K. Uosaki, Langmuir 17, 7784 (2001).
19. E. S. Snow and P. M. Campbell, Science 270, 1639 (1995).
20. E. S. Snow and P. M. Campbell, Physica B 227, 279 (1996).
21. A. Olbrich, B. Ebersberger, C. Boit, J. Vancea, H. Hoffmann, H. Altmann, G. Gieres, and J. Wecker, Appl. Phys. Lett. 78, 2934 (2001).
22. M. Tello and R. Garcia, Appl. Phys. Lett. 79, 424 (2001).
23. M. Lazzarino, S. Heun, B. Ressel, and K. C. Prince, Appl. Phys. Lett. 81, 2842 (2002).
24. K. Kobayashi, Y. Tomita, and S. Yoshida, Nano Lett. 2, 925 (2002).
25. R. Held, T. Heinzel, P. Studerus, and K. Ensslin, Physica E (Amsterdam) 2, 748 (1998).
26. C. Huh and S. J. Park, J. Vac. Sci. Technol. B 18, 55 (2000).
27. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996).
28. D. Wang, L. Tsau, and K. L. Wang, Appl. Phys. Lett. 67, 1295 (1995).
29. H. Sugimura and N. Nakagiri, Jpn. J. Appl. Phys., Part 1 34, 3406 (1995).
30. P. C. Joshi and M. W. Cole, J. Appl. Phys. 86, 871 (1999).
31. Y. Nakagawa and T. Okada, J. Appl. Phys. 68, 556 (1990).
32. S. Tanimoto, M. Matsui, K. Kamisako, K. Kuroiwa, and Y. Tarui, J. Electrochem. Soc. 139, 320 (1992).
33. Y. Nishimura, K. Tokunaga, and M. Tsuji, Thin Solid Films 226, 144 (1993).
34. K. W. Kwon, C. S. Rang, S. O. Park, H. K. Kang, and S. T. Ann, IEEE Trans. Electron Devices 43, 919 (1996).
35. J. Y. Zhang, B. Lim, V. Dusastre, and I. W. Boyd, Appl. Phys. Lett. 73, 2299 (1998).
36. J. Frenkel, Phys. Rev. 54, 647 (1938).
37. W. R. Harrell and J. Frey, Thin Solid Films 352, 195 (1999).
38. W. R. Harrell and C. Gopalakrishnan, Thin Solid Films 405, 205 (2002).
39. V. I. Kol'dyaev, Philos. Mag. B 79, 331 (1999).
40. S. D. Ganichev, E. Ziemann, and W. Prettl, Phys. Rev. B 61, 10361 (2001).
41. D. J. Smith and L. Young, Thin Solid Films 101, 11 (1983).
42. V. A. Macagno and J. W. Schultze, J. Electroanal. Chem. 180, 157 (1984).
43. H. J. Mathieu and D. Landolt, Surf. Interface Anal. 5, 77 (1983).
44. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R. 22, 269 (1998).
45. C. J. Dell'Oca, D. J. Pulfrey, and L. Young, in Physics of Thin Films, edited by M. H. Francomb and R. W. Hoffmann (Academic, London, 1971), Vol. 6.
46. O. Kerrec, D. Devilliers, H. Groult, and M. Chemla, Electrochim. Acta 40, 719 (1995).
47. I. Montero, J. M. Albella, and J. M. Martinez-Duart, Electrochim. Acta 35, 855 (1990).
48. Y. S. Kim, Y. H. Lee, K. M. Lim, and M. Y. Sung, Appl. Phys. Lett. 74, 2800 (1999).
49. C. Chaneliere, S. Four, J. L. Autran, and R. A. B. Devine, Microelectron. Reliab. 39, 261 (1999).
50. C. Chaneliere, J. L. Autran, and R. A. B. Devine, J. Appl. Phys. 86, 480 (1999).
51. M. Houssa, R. Degraeve, P. W. Mertens, M. M. Heyns, J. S. Jeon, A. Halliyal, and B. Ogle, J. Appl. Phys. 86, 6462 (1999).
52. S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. 90, 1501 (2001).
53. S. Ezhilvalavan and T. Y. Tseng, J. Appl. Phys. 83, 4797 (1998).
54. A. Paskaleva, E. Atanassova, and T. Dimitrova, Vacuum 58, 470 (2000).