Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 728-730

  Roschier, Leif ^a   Penttilä, Jari ^a   Martin, Michel ^a   Hakonen, Pertti ^a   Paalanen, Mikko ^a   Tapper, Unto ^b   Kauppinen, Esko I ^b   Journet, Catherine ^c   Bernier, Patrick ^c  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARBON; CHARGE CARRIERS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRAPS; GOLD; NANOTUBES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSPORT PROPERTIES;

COULOMB STAIRCASE MODELS; MULTIWALLED CARBON NANOTUBES (MWNT); SINGLE-ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0032620842     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124495     Document Type: Article

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