Role of space charge in scanned probe oxidation

Journal of Applied Physics

Volumn 84, Issue 12, 1998, Pages 6891-6900

  Dagata, J A ^a   Inoue, T ^b   Itoh, J ^b   Matsumoto, K ^b   Yokoyama, H ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001187432     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368986     Document Type: Article

References (35)

1. J. A. Dagata, Science 270, 1625 (1995), and references therein.
2. J. A. Dagata, J. Schneir, H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990).
3. F. Perez-Murano, G. Abadal, X. Aymerich, J. Servat, P. Gorostiza, and F. Sanz, J. Appl. Phys. 78, 6797 (1995).
4. R. Garcia, M. Calleja, and F. Perez-Murano, Appl. Phys. Lett. 72, 2295 (1998); R. Garcia, M. Calleja, and H. Rohrer, Phys. Rev. Lett, (submitted).
5. R. Garcia, M. Calleja, and F. Perez-Murano, Appl. Phys. Lett. 72, 2295 (1998); R. Garcia, M. Calleja, and H. Rohrer, Phys. Rev. Lett, (submitted).
6. M. Calleja, J. Anguita, R. Garcia, K. Birkelund, F. Perez-Murano, and J. A. Dagata, Nanotechnology (in press).
7. P. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997).
8. D. Stievenard, P. A. Fontaine, and E. Dubois, Appl. Phys. Lett. 70, 3272 (1997); P. A. Fontaine, E. Dubois, and D. Stievenard, J. Appl. Phys. 84, 1776 (1998).
9. D. Stievenard, P. A. Fontaine, and E. Dubois, Appl. Phys. Lett. 70, 3272 (1997); P. A. Fontaine, E. Dubois, and D. Stievenard, J. Appl. Phys. 84, 1776 (1998).
10. J. A. Dagata, Nanotechnology 8, A3 (1997).
11. J. A. Dagata, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 73, 271 (1998).
12. K. Morimoto, K. Araki, K. Yamashita, K. Morita, and M. Niwa, Appl. Surf. Sci. 117/118, 652 (1997).
13. T. Hattori, Y. Ejiri, K. Saito, and M. Yasutake, J. Vac. Sci. Technol. A 12, 2586 (1994).
14. A. E. Gordon, R. T. Fayfield, D. D. Litfin, and T. K. Higman, J. Vac. Sci. Technol. B 13, 2805 (1995).
15. T. G. Ruskell, J. L. Pyle, R. K. Workman, X. Yao, and D. Sarid, Electron. Lett. 32, 1411 (1996).
16. P. A. Fontaine, E. DuBois, and D. Stievenard, J. Appl. Phys. 84, 1776 (1998).
17. M. Ishii and K. Matsumoto, Jpn. J. Appl. Phys., Part 1 34, 1329 (1995).
18. M. J. Dignam, in Oxides and Oxide Films, edited by J. W. Diggle (Marcel Dekker, New York, 1972), Vol. 1, pp. 92-281.
19. A. T. Fromhold, Jr., in Oxides and Oxide Films, edited by J. W. Diggle and A. K. Vijh (Marcel Dekker, New York, 1976), Vol. 3, pp. 1-272.
20. Instabilities in Silicon Devices, edited by G. Barbottin and A. Vapaille (North-Holland, Amsterdam, 1986), Vol. 1, Chaps. 2 and 4.
21. D. R. Wolters, J. Electrochem. Soc. 127, 2072 (1980).
22. E. Rosenbaum, Z. Liu, and C. Hu, IEEE Trans. Electron Devices 40, 2287 (1993).
23. E. H. Poindexter, C. F. Young, and G. J. Gerardi, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. Gusev, and A. Vul' (Kluwer, Boston, 1998) (in press).
24. Certain commercial equipment, instruments, or materials are identified in this paper in order to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement by NIST, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.
25. Digital Instruments, Santa Barbara, CA.
26. H. Yokoyama and T. Inoue, Thin Solid Films 242, 33 (1994); H. Yokoyama, T. Inoue, and J. Itoh, Appl. Phys. Lett. 65, 3143 (1994).
27. H. Yokoyama and T. Inoue, Thin Solid Films 242, 33 (1994); H. Yokoyama, T. Inoue, and J. Itoh, Appl. Phys. Lett. 65, 3143 (1994).
28. NT-MDT, Zelenograd, Russia.
29. CRC Handbook of Chemistry and Physics, edited by R. C. Weast, 69th ed. (CRC, Boca Raton, FL, 1988), pp. B188-195.
30. P. Schmuki, H. Bohni, and J. A. Bardwell, J. Electrochem. Soc. 142, 1705 (1995).
31. Transitions appear at much earlier time in Figs. 5 and 8 than ones indicated in Table II, for example, because in the first case oxidation was performed with a 10 to 20 nm radius tip on a hydrogen-terminated substrate, rather than with a blunter, 100 nm radius, tip on a native-oxide-covered substrate.
32. H. Z. Massoud, J. D. Plummer, and E. A. Irene, J. Electrochem. Soc. 132, 2693 (1985).
33. N. F. Mott, S. Rigo, F. Rochet, and A. M. Stoneham, Philos. Mag. 60, 189 (1989).
34. E. Dubois and R. Garcia (private communication).
35. F. Perez-Murano and K. Morimoto (private communication).