Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 66-71

  Chien, F S S ^a,e   Hsieh, W F ^b   Gwo, S ^c   Jun, J ^d   Silver, R M ^d   Vladar A E ^d   Dagata, J A ^d  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e TUNGHAI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LATERAL DIMENSIONS; SCANNING PROBE LITHOGRAPHY (SPL);

AMMONIUM COMPOUNDS; ANISOTROPY; ETCHING; LITHOGRAPHY; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY;

SILICON;

EID: 31144475354     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1835318     Document Type: Article

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