Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5299-5301

  Austin, Michael D ^a,b   Ge, Haixiong ^a,b   Wu, Wei ^a,b   Li, Mingtao ^a,b   Yu, Zhaoning ^a,b   Wasserman, D ^a   Lyon, S A ^a   Chou, Stephen Y ^a,b  

^a Princeton University   (United States)

^b Nanostructure Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOGAPS; PHOTOCURABLE NANOIMPRINT LITHOGRAPHY (P-NIL); ROOM TEMPERATURE (RT); THERMAL DAMAGE;

ATOMIC FORCE MICROSCOPY; CURING; ELECTRON BEAM LITHOGRAPHY; HYDROFLUORIC ACID; MACROMOLECULES; MAGNETIC STORAGE; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEPARATION; SOLUTIONS; ULTRAVIOLET RADIATION;

NANOTECHNOLOGY;

EID: 3242676271     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766071     Document Type: Article

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