Ultrahigh resolution of calixarene negative resist in electron beam lithography

Applied Physics Letters

Volumn 68, Issue 9, 1996, Pages 1297-1299

  Fujita, J ^a   Ohnishi, Y ^a   Ochiai, Y ^a   Matsui, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001512129     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115958     Document Type: Article

References (7)

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3. D. M. Eigler and E. K. Schmeizer, Nature INS 344, 524 (1991).
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5. N. Wamme and Y. Ohnishi, Proc. Am. Chem. Soc. PMSE.
6. For example, SAL showed about % thickness reduction from private communication.
7. T. Yoshimura, H. Shiraishi, J. Yamamoto, and S. Okazaki, Appl. Phys. Lett. AIP 63, 764 (1993).