Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 10044-10050

  Chien, F S S ^a   Hsieh, W F ^a   Gwo, S ^b   Vladar, A E ^c   Dagata, J A ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DIRECTION; ETCHED STRUCTURES; FEATURE SIZES; GRID STRUCTURES; KEY TECHNIQUES; MULTI-LEVEL PATTERNING; NANO-METER-SCALE; PATTERN SPACING; SCANNING PROBE MICROSCOPE; SCANNING PROBE OXIDATIONS; SI(110); SILICON NANOSTRUCTURES; SILICON ON INSULATOR WAFERS; SILICON SUBSTRATES; TETRAMETHYL AMMONIUM HYDROXIDE;

AMMONIUM COMPOUNDS; ANISOTROPIC ETCHING; CRYSTAL ORIENTATION; MONOLITHIC INTEGRATED CIRCUITS; NANOSTRUCTURES; OXIDATION; PHOTOLITHOGRAPHY; PHOTONIC DEVICES; RAPID PROTOTYPING;

SILICON;

EID: 0037098064     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476072     Document Type: Article

References (32)

1. Materials and Devices for Silicon-Based Optoelectronics, edited by A. Polman, S. Coffa, and R. Soref (Material Research Society, Warrendale, 1998).
2. J. S. Foresi, P. R. Villeneuve, J. Ferrera, E. R. Thoen, G. Steinmeyer, S. Fan, J. D. Joannopoulos, L. C. Kimerling, H. I. Smith, and E. P. Ippen, Nature (London) 390, 143 (1997). nat NATUAS 0028-0836
3. T. Zijlstra, E. van der Drift, M. J. A. de Dood, E. Snoeks, and A. Polman, J. Vac. Sci. Technol. B 17, 2734 (1999). jvb JVTBD9 0734-211X
4. D. L. Brundrett, E. N. Glytsis, and T. K. Gaylord, Opt. Lett. 23, 700 (1998). opl OPLEDP 0146-9592
5. P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997). nno NNOTER 0957-4484
6. Y. Kanamori, K. Hane, H. Sai, and H. Yugami, Appl. Phys. Lett. 78, 142 (2001). apl APPLAB 0003-6951
7. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990); apl APPLAB 0003-6951
8. J. A. Dagata, Science 270, 1625 (1995), and references therein. sci SCIEAS 0036-8075
9. H. Sugimura, T. Uchida, N. Kitamura, and H. Masuhara, J. Phys. Chem. 98, 4352 (1994). jch JPCHAX 0022-3654
10. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996). apl APPLAB 0003-6951
11. S. Gwo, C.-L. Yeh, P.-F. Chen, Y.-C. Chou, T. T. Chen, T.-S. Chao, S.-F. Hu, and T.-Y. Huang, Appl. Phys. Lett. 74, 1090 (1999). apl APPLAB 0003-6951
12. F. S.-S. Chien, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo, T.-S. Chao, and W.-F. Hsieh, Appl. Phys. Lett. 76, 360 (2000). apl APPLAB 0003-6951
13. Ph. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997). apl APPLAB 0003-6951
14. M. Calleja and R. García, Appl. Phys. Lett. 76, 3427 (2000). apl APPLAB 0003-6951
15. J. A. Dagata, T. Inoue, J. Itoh, K. Matsumoto, and H. Yokoyama, J. Appl. Phys. 84, 6891 (1998). jap JAPIAU 0021-8979
16. J. A. Dagata, F. Pérez-Murano, G. Abadal, K. Morimoto, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 76, 2710 (2000). apl APPLAB 0003-6951
17. K. Morimoto, F. Pérez-Murano, and J. A. Dagata, Appl. Surf. Sci. 158, 205 (2000). asu ASUSEE 0169-4332
18. R. Klauser, I.-H. Hong, H.-J. Su, T. T. Chen, S. Gwo, S.-C. Wang, T. J. Chuang, and V. A. Gritsenko, Appl. Phys. Lett. 79, 3143 (2001). apl APPLAB 0003-6951
19. R. García, M. Calleja, and H. Rohrer, J. Appl. Phys. 86, 1898 (1999). jap JAPIAU 0021-8979
20. E. B. Cooper, S. R. Manalis, H. Fang, H. Dai, K. Matsumoto, S. C. Minne, T. Hunt, and C. F. Quate, Appl. Phys. Lett. 75, 3566 (1999). apl APPLAB 0003-6951
21. R. W. Cohn, S. F. Lyuksyutov, K. M. Walsh, and M. M. Crain, Opt. Rev. 6, 345 (1999). opu OPREFN 1340-6000
22. E. S. Snow, W. H. Juan, S. W. Pang, and P. M. Campbell, Appl. Phys. Lett. 66, 1729 (1995). apl APPLAB 0003-6951
23. F. S.-S. Chien, C.-L. Wu, Y.-C. Chou, T. T. Chen, S. Gwo, and W.-F. Hsieh, Appl. Phys. Lett. 75, 2429 (1999). apl APPLAB 0003-6951
24. F. S.-S. Chien, Y. C. Chou, T. T. Chen, W.-F. Hsieh, T.-S. Chao, and S. Gwo, J. Appl. Phys. 89, 2465 (2001). jap JAPIAU 0021-8979
25. S. Sharma, M. K. Sunkara, M. M. Crain, S. F. Lyuksyutov, S. A. Harfenist, K. M. Walsh, and R. W. Cohn, J. Vac. Sci. Technol. B 19, 1743 (2001). jv2 JVTBD9 1071-1023
26. O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka, and S. Sugiyama, Sens. Actuators A 34, 51 (1992). sac SAAPEB 0924-4247
27. A. Merlos, M. Acero, M. H. Bao, J. Bausells, and J. Esteve, Sens. Actuators A 37-38, 737 (1993). sac SAAPEB 0924-4247
28. TopoMetrix (Santa Clara, CA), Accurex II. Certain commercial equipment is identified in this article in order to describe the experimental procedure adequately. Such endorsement does not imply recommendation or endorsement by NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.
29. NTMDT (Zelenograd, Russia). See disclaimer in Ref. 27.
30. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, J. Electrochem. Soc. 137, 3612 (1990). jes JESOAN 0013-4651
31. I. Zubel, Sens. Actuators A 84, 116 (2000). sac SAAPEB 0924-4247
32. O. Powell and H. B. Harrison, J. Micromech. Microeng. 11, 217 (2001). jmg JMMIEZ 0960-1317