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Volumn , Issue , 1996, Pages 108-109
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Vertical, fully-depleted, surrounding gate MOSFETs on sub-0.1μm thick silicon pillars
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
GATES (TRANSISTOR);
LITHOGRAPHY;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SUBSTRATES;
SELF ALIGNED DRAIN;
SILICON PILLARS;
SUBTHRESHOLD SLOPES;
MOSFET DEVICES;
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EID: 0029717332
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (29)
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References (5)
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