Stacked high-ε gate dielectric for gigascale integration of metal-oxide-semiconductor technologies

Applied Physics Letters

Volumn 72, Issue 22, 1998, Pages 2835-2837

  Roy, P K ^a   Kizilyalli, I C ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544444454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121473     Document Type: Article

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