Ultra thin (<20 angstroms) CVD Si3N4 gate dielectric for deep-sub-micron CMOS devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 373-376

  Song, S C ^a   Luan, H F ^a   Chen, Y Y ^a   Gardner, M ^a   Fulford, J ^a   Allen, M ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON NITRIDE; STRESSES; TRANSCONDUCTANCE; ULTRATHIN FILMS;

GATE DIELECTRICS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

MOSFET DEVICES;

EID: 0032278080     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)