Properties of epitaxial SrTiO3 thin films grown on silicon by molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 427-433

  Yu, Z ^a   Droopad, R ^a   Ramdani, J ^a   Curless, J A ^a   Overgaard, C D ^a   Finder, J M ^a   Eisenbeiser, K W ^a   Wang, J ^a   Hallmark, J A ^a   Ooms, W J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; ELLIPSOMETRY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

CAPACITANCE VOLTAGE CHARACTERISTICS; INTERFACE STATE DENSITY; LEAKAGE CURRENT DENSITY; SPECTROSCOPIC ELLIPSOMETRY; TWO DIMENSIONAL EPITAXIAL OXIDE;

STRONTIUM COMPOUNDS;

EID: 0033339409     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-427     Document Type: Conference Paper

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