Electronic properties of the Si/SiO2 interface from first principles

Physical Review Letters

Volumn 85, Issue 6, 2000, Pages 1298-1301

  Neaton, J B ^a   Muller, D A ^b   Ashcroft, N W ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; DIELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ELLIPSOMETRY; ENERGY GAP; MATHEMATICAL MODELS; SILICA; SILICON;

ELECTRONIC CHARGE DENSITY; LOCAL DENSITY APPROXIMATION; PHOTOEMISSION SPECTROSCOPY; VIENA AB INITIO SIMULATION PACKAGE;

INTERFACES (MATERIALS);

EID: 12844285514     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1298     Document Type: Article

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