Zirconium oxide based gate dielectrics with equivalent oxide thickness of less than 1.0 nm and performance of submicron MOSFET using a nitride gate replacement process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 149-152

  Ma, Yanjun ^a   Ono, Yoshi ^a   Stecker, Lisa ^a   Evans, David R ^a   Hsu, S T ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; CAPACITANCE MEASUREMENT; CRYSTALLIZATION; DOPING (ADDITIVES); ELLIPSOMETRY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

CAPACITANCE VOLTAGE CHARACTERISTICS; CLASSICAL DIELECTRIC THICKNESS; EQUIVALENT OXIDE THICKNESS; SPECTROSCOPIC ELLIPSOMETRY;

DIELECTRIC MATERIALS;

EID: 0033315071     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)