MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 145-148

  Qi, Wen Jie ^a   Nieh, Renee ^a   Lee, Byoung Hun ^a   Kang, Laegu ^a   Jeon, Yongjoo ^a   Onishi, Katsunori ^a   Ngai, Tat ^a   Banerjee, Sanjay ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); HYSTERESIS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOS CAPACITORS; MOSFET DEVICES; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

CAPACITANCE VOLTAGE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; FREQUENCY DISPERSION; GATE DIELECTRIC; INTERFACE STATE DENSITY; STRESS INDUCED LEAKAGE CURRENTS;

DIELECTRIC MATERIALS;

EID: 0033312228     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)