Boron diffusion and penetration in ultrathin oxide with poly-Si gate

IEEE Electron Device Letters

Volumn 19, Issue 8, 1998, Pages 291-293

  Cao, Min ^a,b   Voorde, Paul Vande ^a,b   Cox, Mike ^b   Greene, Wayne ^a,b  

^a IEEE   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS SILICON; CAPACITORS; DIFFUSION IN SOLIDS; FLUORINE; MOS DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ULTRATHIN OXIDES;

GATES (TRANSISTOR);

EID: 0032139019     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.704403     Document Type: Article

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