Characteristics of Al2O3 gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 46-47

  Park, Dae Gyu ^a   Cho, Heung Jae ^a   Lim, Chan ^a   Yeo, In Seok ^a   Roh, Jae Sung ^a   Kim, Chung Tae ^a   Hwang, Jeong Mo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; TRANSCONDUCTANCE;

ATOMIC LAYER DEPOSITION; CURRENT DRIVABILITY; INTERFACE STATE DENSITY;

VLSI CIRCUITS;

EID: 0033716164     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)