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Volumn 78, Issue 12, 2001, Pages 1718-1720

Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035911339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1356725     Document Type: Article
Times cited : (91)

References (19)
  • 11
    • 0040512548 scopus 로고    scopus 로고
    • note
    • 3/2 peak at 99.3 eV.
  • 18
    • 0001954222 scopus 로고    scopus 로고
    • edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters (American Institute of Physics, Woodbury, New York)
    • J. R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology: 1998 International Conference, edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters (American Institute of Physics, Woodbury, New York, 1998), pp. 235-239.
    • (1998) Characterization and Metrology for ULSI Technology: 1998 International Conference , pp. 235-239
    • Hauser, J.R.1    Ahmed, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.