1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 1038-1039

  He, B ^a   Ma, T ^a   Campbell, S A ^a   Gladfelter, W L ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDING; PYROLYSIS; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; TITANIUM DIOXIDE;

OXIDE EQUIVALENT GATE INSULATORS;

SEMICONDUCTING FILMS;

EID: 0032279435     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)