Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al2O3 with low leakage and low interface states

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 605-608

  Manchanda, L ^a   Lee, W H ^a   Bower, J E ^a   Baumann, F H ^a   Brown, W L ^a   Case, C J ^a   Keller, R C ^a   Kim, Y O ^a   Laskowski, E J ^a   Morris, M D ^a   Opila, R L ^a   Silverman, P J ^a   Sorsch, T W ^a   Weber, G R ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DIELECTRIC FILMS; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; NANOTECHNOLOGY; SILICON; ULTRATHIN FILMS; ZIRCONIUM;

GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0032256250     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)