Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Applied Physics Letters

Volumn 77, Issue 17, 2000, Pages 2710-2712

  Guha, S ^a   Cartier, E ^a   Gribelyuk, M A ^a,b   Bojarczuk, N A ^a   Copel, M C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000552940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1320464     Document Type: Article

References (13)

1. Semiconductor Industry Association, The International Technology Roadmap for Semiconductors (Sematech, Austin, 1999).
2. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
3. S. A. Campbell, H. S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, IBM J. Res. Dev. 43, 383 (1999).
4. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 767, 436 (2000).
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
6. W. M. Cranton, D. M. Spink, R. Stevens, and C. B. Thomas, Thin Solid Films 226, 156 (1993).
7. Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, and C. M. Kwei, IEEE Electron Device Lett. 21, 341 (2000).
8. S. Guha, N. A. Bojarczuk, and D. W. Kisker, Appl. Phys. Lett. 69, 2879 (1996).
9. phy is the physical thickness of the dielectric film.
10. S. H. Lo and D. A. Buchanan, IEEE Electron Device Lett. ED-18, 209 (1997).
11. Handbook on the Physics and Chemistry of Rare Earths edited by L. Eyring, K. A. Gschneider and L. Eyring (North-Holland, Amsterdam, 1979), Vol. 3, Chap. 27.
12. H. C. Lu, E. P. Gusev, E. Garfunkel, and T. Gustafsson, Surf. Sci. 351, 111 (1996).
13. F. U. Hillebrecht, M. Ronay, D. Rieger, and F. J. Himpsel, Phys. Rev. B 34, 5377 (1986).