MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 27-30

  Lee, C H ^a   Luan, H F ^a   Bai, W P ^a   Lee, S J ^a   Jeon, T S ^a   Senzaki, Y ^a   Roberts, D ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTROCHEMICAL ELECTRODES; LEAKAGE CURRENTS; MOS DEVICES; RAPID THERMAL ANNEALING; THERMAL DIFFUSION; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRA THIN RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

ZIRCONIUM COMPOUNDS;

EID: 0034453391     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. MOSCAP and MOSFET characteristics using ZrO2 gate dielectrics deposited directly on Si
2. Stable zirconium silicate gate dielectrics deposited directly on silicon
3. Zirconium oxide based gate dielectrics with equivalent oxide thickness of less than 1.0nm and performance of submicron MOSFET using a nitride gate replacement process