Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

Applied Physics Letters

Volumn 77, Issue 11, 2000, Pages 1704-1706

  Qi, Wen Jie ^a   Nieh, Renee ^a   Dharmarajan, Easwar ^a   Lee, Byoung Hun ^a   Jeon, Yongjoo ^a   Kang, Laegu ^a   Onishi, Katsunori ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000780316     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1308535     Document Type: Article

References (9)

1. W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet. 1999, 145.
2. B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet. 1999, 133.
3. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000).
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
5. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
6. M. A. Russak, C. V. Jahnes, and E. P. Katz, J. Vac. Sci. Technol. A 7, 1248 (1989).
7. W. K. Henson, K. Z. Ahmed, E. M. Vogel, J. R. Hauser, J. J. Wortman, R. D. Venables, M. Xu, and D. Venables, IEEE Electron Device Lett. 20, 179 (1999).
8. W. B. Blumenthal, The Chemical Behavior of Zirconium (Van Nostrand, Princeton, NJ, 1958), pp. 201-219.
9. B. Y. Kim, H. F. Luan, and D. L. Kwong, Tech. Dig. Int. Electron Devices Meet. 1997, 463.