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Volumn 567, Issue , 1999, Pages 415-425

Crystalline oxides on silicon - alternative dielectrics for advanced transistor technologies

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRICITY; INTERFACES (MATERIALS); MOS CAPACITORS; PERMITTIVITY; PHASE TRANSITIONS; PHYSICAL PROPERTIES; POLARIZATION; THERMODYNAMICS; TRANSISTORS;

EID: 0033355960     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-415     Document Type: Conference Paper
Times cited : (17)

References (29)
  • 1
    • 33751143812 scopus 로고
    • U.S. Patent No. 2791758
    • D.H. Looney, U.S. Patent No. 2791758(1957);
    • (1957)
    • Looney, D.H.1
  • 2
    • 33751152873 scopus 로고
    • U.S. Patent No. 2791759
    • W.L. Brown, U.S. Patent No. 2791759(1957);
    • (1957)
    • Brown, W.L.1
  • 3
    • 33751144427 scopus 로고
    • U.S. Patent No. 2791760
    • I.M. Ross, U.S. Patent No. 2791760(1957);
    • (1957)
    • Ross, I.M.1
  • 4
    • 33751132079 scopus 로고
    • U.S. Patent No. 2791761
    • J.A. Morton, U.S. Patent No. 2791761(1957).
    • (1957)
    • Morton, J.A.1
  • 9
    • 33751145925 scopus 로고    scopus 로고
    • private communication
    • D.B. Beach, private communication (1999).
    • (1999)
    • Beach, D.B.1
  • 18
    • 33751147885 scopus 로고
    • edited by E. Kasper and J.C. Bean CRC, Boca Raton, FL
    • J, M. Phillips, in Silicon-Molecular Beam Epitaxy, edited by E. Kasper and J.C. Bean (CRC, Boca Raton, FL, 1988), Vol. 1, p. 135.
    • (1988) Silicon-Molecular Beam Epitaxy , vol.1 , pp. 135
    • Phillips, J.M.1
  • 19
    • 4243119797 scopus 로고
    • edited by E. Kasper and J.C. Bean CRC, Boca Raton, FL
    • J.C. Bean, in Silicon-Molecular Beam Epitaxy, edited by E. Kasper and J.C. Bean (CRC, Boca Raton, FL, 1988), Vol. 2, p. 65.
    • (1988) Silicon-Molecular Beam Epitaxy , vol.2 , pp. 65
    • Bean, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.