80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 223-226

  Buchanan, D A ^a   Gusev, E P ^a   Cartier, E ^a   Okorn Schmidt, H ^a   Rim, K ^a   Gribelyuk, M A ^a   Mocuta, A ^a   Ajmera, A ^a   Copel, M ^a   Guha, S ^a   Bojarczuk, N ^a   Callegari, A ^a   D'Emic, C ^a   Kozlowski, P ^a   Chan, K ^a   Fleming, R J ^a   Jamison, P C ^a   Brown, J ^a   Arndt, R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; PERMITTIVITY; POLYSILICON; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD);

FIELD EFFECT TRANSISTORS;

EID: 0034454056     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. it
2. 3 gate dielectrics with equivalent thickness 5-10 A
3. 2 thin films on silicon substrate by MOCVD
4. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
5. 2 dielectrics
6. Atomic layer epitaxy
7. 3 on Si
8. Quantum-mechanical of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs
9. Modeling and characterization of n+ and p+-polysilicon-gated ultra thin oxides
10. Ultra thin oxide reliability for ULSI applications
11. Reliability projection for ultra thin oxides at low voltage
12. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration