Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content

IEEE Electron Device Letters

Volumn 19, Issue 6, 1998, Pages 207-209

  Guo, Xin ^a,b   Ma, T P ^a,b  

^a IEEE   (United States)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TUNNELING; NITROGEN; OXYGEN; SILICON NITRIDE; ULTRATHIN FILMS;

EQUIVALENT OXIDE THICKNESS (EOT); OXYNITRIDE; SILICON OXIDE;

LEAKAGE CURRENTS;

EID: 0032096868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.678546     Document Type: Article

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