Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 181-183

  Kang, Laegu ^a   Lee, Byoung Hun ^a   Qi, Wen Jie ^a   Jeon, Yongjoo ^a   Nieh, Renee ^a   Gopalan, Sundar ^a   Onishi, Katsunori ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDATION; PLATINUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

CAPACITANCE VOLTAGE CHARACTERISTICS; CHARGE TRAPPING; GATE DIELECTRIC; OXIDE MODULATION TECHNIQUE; ULTRATHIN HAFNIUM OXIDE;

MOS CAPACITORS;

EID: 0343168081     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830975     Document Type: Article

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