Evaluating the minimum thickness of gate oxide on silicon using first-principles method

Applied Surface Science

Volumn 135, Issue 1-4, 1998, Pages 137-142

  Tang, Shaoping ^a   Wallace, Robert M ^a   Seabaugh, Alan ^b   King Smith, Dominic ^c  

^a TEXAS INSTRUMENTS   (United States)

^b RAYTHEON COMPANY   (United States)

^c MSI Technologies Inc   (United States)

Author keywords

Band offset; Density functional theory; Gate oxide; Oxide semiconductor interface; Surface

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SILICA; SUBSTRATES;

BAND OFFSET; DENSITY FUNCTIONAL THEORY; GATE OXIDES;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0032475316     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00286-4     Document Type: Article

References (31)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997, pp. 14,46.
2. 2 and Its Interfaces, Pergamon, New York, 1978.
3. 2 Interface 2, Plenum, New York, 1993.
4. F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff, G. Hollinger, Phys. Rev. B 38 (1988) 6084, and references therein.
5. M.M. Banaszak Holl, F.R. McFeely, Phys. Rev. Lett. 71 (1993) 2441.
6. M.M. Banaszak Holl, S. Lee, F.R. McFeely, Appl. Phys. Lett. 65 (1994) 1097.
7. S. Lee, M.M. Banaszak Holl, W.H. Hung, F.R. McFeely, Appl. Lett. 68 (1996) 1081.
8. K.Z. Zhang, M.M. Banaszak Holl, J.E. Bender IV, S. Lee, F.R. McFeely, Phys. Rev. B 54 (1996) 7686.
9. A. Ourmazd, D.W. Taylor, J.A. Rentschler, J. Bevk, Phys. Rev. Lett. 59 (1987) 213.
10. T.A. Rabedeau, I.M. Tidswell, P.S. Pershan, J. Bevk, B.S. Freer, Appl. Phys. Lett 59 (1991) 3422.
11. A. Munkholm, S. Brennan, F. Comin, L. Ortega, Phys. Rev. Lett. 75 (1995) 4254.
12. I. Ohdomari, H. Akatsu, Y. Yamakoshi, K. Kishimoto, J. Non-Cryst. Solids 89 (1987) 239.
13. I. Ohdomari, H. Akatsu, Y. Yamakoshi, K. Kishimoto, J. Appl. Phys. 62 (1987) 3751.
14. T. Motooka, Mater. Res. Soc. Symp. Proc. 159 (1990) 203.
15. A. Pasquarello, M.S. Hybertsen, R. Car, Phys. Rev. Lett. 74 (1995) 1024.
16. A. Pasquarello, M.S. Hybertsen, R. Car, Appl. Phys. Lett. 68 (1996) 625.
17. A. Pasquarello, M.S. Hybertsen, R. Car, Phys. Rev. B 53 (1996) 10942.
18. H. Kageshima, K. Shiraishi, Surf. Sci. 380 (1997) 61.
19. M. Hane, Y. Miyamoto, A. Oshiyama, Phys. Rev. B 41 (1990) 12637.
20. 2 , Pergamon, 1978, p. 333.
21. F. Herman, R.V. Kasowski, J. Vac. Sci. Technol. 19 (1981) 395.
22. M.P. Teter, unpublished (1990). This parameterization of the exchange correlation energy is very similar to the one proposed by Vosko et al., in: S.J. Vosko, L. Wilk, M. Nusair, Can. J. Phys. 58 (1980) 1200.
23. D.M. Ceperley, B.J. Alder, Phys. Rev. Lett. 45 (1980) 566.
24. N. Troullier, J.L. Martin, M.P. Teter, Solid State Commun. 74 (1990) 613.
25. H.J. Monkhorst, J.D. Pack, Phys. Rev. B 13 (1976) 5188.
26. R.W.G. Wyckoff, Crystal Structures, 2nd edn., Interscience, New York, 1965, p. 318.
27. F. Liu, S.H. Garofalini, R.D. King-Smith, D. Vanderbilt, Phys. Rev. Lett. 70 (1993) 2750, and references therein.
28. M.P. Teter, Phys. Rev. B 48 (1993) 5031.
29. C.G. Van de Walle, R.M. Martin, Phys. Rev. B 35 (1987) 8154.
30. J.L. Alay, M. Fukuda, K. Nakagawa, S. Yokoyama, M. Hirose, in: Proc. International Conference on Solid State Devices and Materials, Osaka, 1995, p. 28.
31. R. Tsu, A. Filios, C. Lofgren, D. Cahill, J. Vannostrand, C.G. Wang, Solid State Electron. 40 (1996) 221.