Deposition and treatment of tio2 as an alternative for ultrathin gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 355-360

  Yanjun, Ma ^a   Yoshi, O N O ^a   Sheng Teng, H S U ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS;

POST DEPOSITION ANNEAL; REACTOR CHAMBER; TITANIUM ISOPROPOXIDE; ULTRA THIN GATE DIELECTRICS;

TITANIUM COMPOUNDS;

EID: 0033356939     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

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