High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 31-34

  Lee, S J ^a   Luan, H F ^a   Bai, W P ^a   Lee, C H ^a   Jeon, T S ^a   Senzaki, Y ^a   Roberts, D ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; POLYSILICON; RAPID THERMAL ANNEALING;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

CHEMICAL VAPOR DEPOSITION;

EID: 0034453463     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)