New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 904-911

  Degraeve, R ^a   Groeseneken, G ^a   Bellens, R ^a   Ogier, J L ^b   Depas, M ^a   Roussel, P J ^a   Maes, H E ^a  

^a IMEC   (Belgium)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL DENSITY; INTRINSIC BREAKDOWN; LITERATURE MODELS; OXIDE BREAKDOWN; STATISTICAL FEATURES; STATISTICAL PROPERTIES; THIN OXIDE LAYERS; ULTRA-THIN OXIDE;

SOLVENTS; STRESSES;

ELECTRON TRAPS;

EID: 0008536196     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662800     Document Type: Article

References (14)

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