Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics

IEEE Electron Device Letters

Volumn 19, Issue 9, 1998, Pages 341-342

  Lu, Qiang ^b   Park, Donggun ^b   Kalnitsky, Alexander ^a,d   Chang, Celene ^c   Cheng, Chia Cheng ^c   Tay, Sing Pin ^e   King, Tsu Jae ^a,b   Hu, Chenming ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAM RESEARCH CORPORATION   (United States)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^e AG Associates Inc   (United States)

Author keywords

Gate dielectric; Tantalum Pentoxide

Indexed keywords

CAPACITANCE; DIELECTRIC FILMS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SUBSTRATES; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

TANTALUM PENTOXIDE;

CAPACITORS;

EID: 0032165959     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.709635     Document Type: Article

References (9)

1. 5, capacitor process technology for 256 Mbit DRAM's," in IEDM Tech. Dig., 1991, p. 827.
2. S. Kamiyama, P. Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama, and A. Ishitani, "Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition," J. Electrochem. Soc., vol. 140, p. 1617, 1993.
3. 5 storage capacitors," in IEDM Tech. Dig., 1996, p. 687.
4. 5 films," IEEE Electron Device Lett., vol. 15, p. 280, Aug. 1994.
5. 5, capacitor," in IEDM Tech. Dig., 1996, p. 683.
6. 5, capacitors' dielectric material for giga-bit DRAM's," in IEDM Tech. Dig., 1995, p. 111.
7. 5, thin-films by oxygen-radical annealing," IEEE Electron Device Lett., vol. 17, p. 431, Sept. 1996.
8. 2O," IEEE Electron Device Lett., vol. 17, no. 7, p. 355, July 1996.
9. 5 capacitor for the 256-Mbit DRAM," IEEE Trans. Electron Devices, vol. 43, p. 919, June 1996.