Ultra thin high quality Ta2O5 gate dielectric prepared by in-situ rapid thermal processing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 609-612

  Luan, H F ^a   Wu, B Z ^a   Kang, L G ^a   Kim, B Y ^a   Vrtis, R ^a   Roberts, D ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; FILM PREPARATION; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

GATE DIELECTRICS; TANTALUM PENTOXIDE;

MOSFET DEVICES;

EID: 0032266791     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)