High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstroms

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 16-17

  Chin, Albert ^a   Wu, Y H ^a   Chen, S B ^a   Liao, C C ^a   Chen, W J ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CONTACTS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

VLSI CIRCUITS;

EID: 0033712917     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)