Vertical replacement-gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 75-78

  Hergenrother, J M ^a   Monroe, D ^a   Klemens, F P ^a   Kornblit, A ^a   Weber, G R ^a   Mansfield, W M ^a   Baker, M R ^a   Baumann, F H ^a   Bolan, K J ^a   Bower, J E ^a   Ciampa, N A ^a   Cirelli, R A ^a   Colonell, J I ^a   Eaglesham, D J ^a   Frackoviak, J ^a   et al , ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

SOLID SOURCE DIFFUSION; VERTICAL REPLACEMENT GATE MOSFET;

MOSFET DEVICES;

EID: 0033329311     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)