MOSFET devices with polysilicon on single-layer HfO2 high-K dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 35-38

  Kang, L ^a   Onishi, K ^a   Jeon, Y ^a   Lee, B H ^a   Kang, C ^a   Qi, W J ^a   Nieh, R ^a   Gopalan, S ^a   Choi, R ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS CAPACITORS; POLYSILICON; SEMICONDUCTOR DOPING;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0034453464     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra thin-oxide nMOSFET's
2. Reliability projection for ultra-thin oxides at low voltage
3. 3 gate dielectrics with equivalent oxide thickness 5-10 Å
4. 2 gate dielectric deposited directly on Si
5. Ultra hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
6. Dual-metal gate technology for deep-submicron CMOS transistors
7. 3 gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices
8. 2 gate dielectric with n+ -polysilicon gate
9. Gate engineering for deep-submicron CMOS transistors
10. 5 dielectric film for high-speed bipolar memories