Transistor characteristics with Ta2U5 gate dielectric

IEEE Electron Device Letters

Volumn 19, Issue 11, 1998, Pages 441-443

  Park, Donggun ^b   King, Ya Chin ^b   Lu, Qiang ^b   King, Tsu Jae ^b   Hu, Chenming ^a,b   Kalnitsky, Alexander ^a,c   Tay, Sing Pin ^d   Cheng, Chia Cheng ^e  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d AG Associates Inc   (United States)

^e LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MOS DEVICES; OXIDES; SILICA;

GATE DIELECTRIC; GATE LEAKAGE CURRENTS;

GATES (TRANSISTOR);

EID: 0032203377     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728906     Document Type: Article

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