MOSFET transistors fabricated with high permitivity tio2 dielectrics

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 104-109

  Campbell, Stephen A ^a   Gilmer, David C ^a   Wang, Xiao Chuan ^a   Hsieh, Ming Ta ^a   Kim, Hyeon Seag ^a   Gladfelter, Wayne L ^a   Yan, Jinhua ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTATIONAL METHODS; DIELECTRIC FILMS; INTERFACES (MATERIALS); PERMITTIVITY; POLYCRYSTALLINE MATERIALS; PYROLYSIS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; THERMOOXIDATION; TITANIUM DIOXIDE; VARACTORS;

FINITE WIDTH EFFECTS; QUANTUM CAPACITANCE EFFECT; TITANIUM TETRAKISISOPROPOXIDE (TTIP); VOLTAGE DEPENDENT ACCUMULATION CAPACITANCE;

MOSFET DEVICES;

EID: 0030865462     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554800     Document Type: Article

References (18)

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