Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

Applied Physics Letters

Volumn 73, Issue 11, 1998, Pages 1517-1519

  Alers, G B ^a   Werder, D J ^a   Chabal, Y ^a   Lu, H C ^b   Gusev, E P ^b   Garfunkel, E ^b   Gustafsson, T ^b   Urdahl, R S ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALS; ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; OXIDES; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

DEPTH PROFILING; INTERMIXING; ION ENERGY SCATTERING; TRANSISTOR GATE CAPACITANCE;

INTERFACES (MATERIALS);

EID: 0032516989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122191     Document Type: Article

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