The electronic structure at the atomic scale of ultrathin gate oxides

Nature

Volumn 399, Issue 6738, 1999, Pages 758-761

  Muller, D A ^a   Sorsch, T ^a   Moccio, S ^a   Baumann, F H ^a   Evans Lutterodt, K ^a   Timp, G ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

CONDUCTION-BAND WAVEFUNCTIONS; ULTRATHIN GATE OXIDES;

SEMICONDUCTOR DEVICE STRUCTURES;

OXIDE; SILICON DIOXIDE;

ARTICLE; ELECTRON; ENERGY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY;

EID: 0033600230     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/21602     Document Type: Article

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