Defect dominated charge transport in amorphous Ta2O5 thin films

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 850-862

  Fleming, R M ^a   Lang, D V ^a   Jones, C D W ^a   Steigerwald, M L ^a   Murphy, D W ^a   Alers, G B ^a   Wong, Y H ^a   Van Dover, R B ^a   Kwo, J R ^a   Sergent, A M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000044129     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373747     Document Type: Article

References (47)

1. W. D. Westwood, N. Waterhouse, and P. S. Wilcox, Tantalum Thin Films (Academic, London, 1975).
2. C. Channeliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R. 22, 269 (1998).
3. T. W. Hickmott, J. Electrochem. Soc. 113, 1223 (1966).
4. J. H. Thomas, Appl. Phys. Lett. 22, 406 (1973).
5. J. H. Thomas, J. Appl. Phys. 45, 5349 (1974).
6. J. H. Thomas, J. Appl. Phys. 45, 835 (1974).
7. M. Hard, Solid-State Electron. 12, 1002 (1960).
8. F. C. Aris and T. J. Lewis, J. Phys. D: Appl. Phys. 6, 1067 (1973).
9. D. A. Vermilyea, J. Electrochem. Soc. 104, 427 (1957).
10. D. A. Vermilyea, J. Electrochem. Soc. 104, 485 (1957).
11. G. A. N. Connell, in Amorphous Semiconductors, edited by M. H. Brodsky (Springer, New York, 1979), Vol. 36, pp. 71-111.
12. W. H. Knausenberger and R. N. Tauber, J. Electrochem. Soc. 120, 927 (1973).
13. A. G. Revesz, J. J. Reynolds, and J. F. Allison, J. Electrochem. Soc. 123, 889 (1976).
14. P. A. Murawala, M. Sawai, T. Tatsuta, O. Tsuji, S. Fujita, and S. Fujita, Jpn. J. Appl. Phys., Part 1 32, 368 (1993).
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
16. Y. Pozdeev-Freeman, A. Gladkikh, M. Karpovski, and A. Palevski, J. Electron. Mater. 27, 1034 (1998).
17. L. S. Palatnik, Y. L. Poszdeev, and V. V. Starikov, Tech. Phys. Lett. 20, 276 (1994).
18. B. T. Boiko, V. R. Kopach, S. M. Melentjev, P. A. Pancheha, Y. L. Pozdeev, and V. V. Starikov, Thin Solid Films 229, 207 (1993).
19. G. A. Thomas, M. Capizzi, and F. DeRosa, Philos. Mag. B 42, 913 (1980).
20. A. K. Jonscher, J. Phys. D: Appl. Phys. 32, R57 (1999).
21. M. Schumacher and R. Waser, Integr. Ferroelectr. 22, 109 (1998).
22. H. Kliem, IEEE Trans. Electr. Insul. 24, 185 (1989).
23. Science and Technology of Electroceramic Thin Films, edited by O. Auciello and R. Waser (Kluwer, Dordrecht, 1994).
24. M. Schumacher, G. W. Dietz, and R. Waser, Integr. Ferroelectr. 10, 231 (1995).
25. Y. Fukuda, K. Aoki, K. Numata, and A. Nishmiura, Jpn. J. Appl. Phys., Part 1 33, 5255 (1994).
26. S. M. Cho and D. Y. Jeon, Thin Solid Films 338, 149 (1999).
27. T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono, Jpn. J. Appl. Phys., Part 1 34, 5077 (1995).
28. T. Horikawa, T. Makita, T. Kuroiwa, and N. Mikami, Jpn. J. Appl. Phys., Part 1 34, 5478 (1995).
29. T. Mihara, H. Watanabe, and C. A. P. d. Araujo, Jpn. J. Appl. Phys., Part 1 33, 5281 (1994).
30. A. de Polignac and M. Jourdain, Thin Solid Films 71, 189 (1908).
31. H. Adachi and Y. Shibata, J. Phys. D: Appl. Phys. 8, 1120 (1975).
32. G. M. Gusinskii, L. G. Karpukhina, V. M. Muzhdaba, V. O. Naidenov, G. F. Tomilenko, and S. D. Khanin, Sov. Phys. Solid State 29, 1867 (1987).
33. M. J. Duggan, T. Saito, and T. Niwa, Solid State Ionics 62, 15 (1993).
34. J. Lee, S. Esayan, J. Prohaska, and A. Safari, Mater. Res. Soc. Symp. Proc. 310, 107 (1993).
35. G. Martin and S. Markram-Ebeid, in Deep Centers in Semiconductors, edited by S. T. Pantelides (Gordon and Breach, Yverdon, Switzerland, 1992), pp. 457-546.
36. M. Brazier, S. Mansour, and M. McElfresh, Appl. Phys. Lett. 74, 4032 (1999).
37. J. A. Davies, B. Domeij, J. P. S. Pringle, and F. Brown. J. Electrochem. Soc. 112, 675 (1965).
38. A. R. West, Solid State Chemistry and its Applications (Wiley, New York, 1984).
39. T. Heiser, S. McHugo, H. Hiesimair, and E. R. Weber, Appl. Phys. Lett. 70, 3576 (1997).
40. E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, J. Appl. Phys. 36, 1664 (1965).
41. J. P. Chang, M. L. Steigerwald, R. M. Fleming, R. L. Opila, and G. B. Alers, Appl. Phys. Lett. 74, 3705 (1999).
42. H. Sawada and K. Kawakami, J. Appl. Phys. 86, 956 (1999).
43. S. Makram-Ebeid and M. Lannoo, Phys. Rev. B 25, 6406 (1982).
44. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
45. V. V. Bryksin and D. D. Khanin, Phys. Solid State 35, 1126 (1993).
46. V. V. Bryksin, M. M. D'yakonov, and S. D. Khanin, Sov. Phys. Solid State 22, 818 (1980).
47. N. F. Mutt, Metal-Insulator Transitions (Taylor & Francis, London, 1990).