Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2005-2007

  Lucovsky, G ^a   Wu, Y ^a   Niimi, H ^a   Misra, V ^a   Phillips, J C ^b  

^a North Carolina State University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; CRYSTAL DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

COMPOSITE GATE DIELECTRICS;

FIELD EFFECT TRANSISTORS;

EID: 0032614424     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123728     Document Type: Article

References (15)

1. C. G. Parker, G. Lucovsky, and J. R. Hauser, IEEE Electron Device Lett. 19, 106 (1998).
2. Y-D Wu and G. Lucovsky, IEEE Electron Device Lett. 19, 357 (1998).
3. Z. Lu, M. J. Williams, P. F. Santos-Filho, and G. Lucovsky, J. Vac. Sci. Technol. A 13, 607 (1995).
4. V. Misra, Z. Wang, H. Lazar, Y. Wu, H. Niimi, G. Lucovsky, J. J. Wortman, and J. R. Hauser (unpublished).
5. G. Lucovsky and H. Z. Massoud, J. Vac. Sci. Technol. B 16, 2191 (1998), and references therein.
6. J. C. Phillips, J. Non-Cryst. Solids 34, 153 (1979); 47, 203 (1983).
7. J. C. Phillips, J. Non-Cryst. Solids 34, 153 (1979); 47, 203 (1983).
8. H. He and M. F. Thorpe, Phys. Rev. Lett. 54, 2107 (1985).
9. J. C. Phillips (unpublished).
10. J. H. Van der Merwe, J. Appl. Phys. 34, 123 (1963).
11. G. Lucovsky and J. C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998).
12. F. L. Galeener, W. Stutius, and G. T. McKinley, in The Physics of MOS Insulators, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener (Pergamon, New York, 1980), p. 77.
13. G. Lucovsky, A. Rozaj-Brvar, and R. F. Davis, in The Structure of Non-Crystalline Materials 1982, edited by P. H. Gaskell, J. M. Parker, and E. A. Davis (Taylor and Francis, London, 1983), p. 193.
14. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).
15. E. M. Vogel, W. L. Hill, V. Misra, P. K. McLarty, J. J. Wortman, J. R. Hauser, P. Morfouli, G. Ghibaudo, and T. Ouisse, IEEE Trans. Electron Devices 43, 753 (1996).