Gate oxides in 50nm devices: thickness uniformity improves projected reliability

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 437-440

  Weir, B E ^a   Silverman, P J ^a   Alam, M A ^a   Baumann, F ^a   Monroe, D ^a   Ghetti, A ^a   Bude, J D ^a   Timp, G L ^a   Hamad, A ^a   Oberdick, T M ^a   Zhao, N X ^a   Ma, Y ^a   Brown, M M ^a   Hwang, D ^a   Sorsch, T W ^a   et al , ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; OXIDES; RELIABILITY; THICKNESS CONTROL; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; WEIBULL DISTRIBUTION;

OXIDE THICKNESS UNIFORMITY; WEIBULL SLOPE;

GATES (TRANSISTOR);

EID: 0033343947     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)