Ultrathin nitrogen-profile engineered gate dielectric films

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 495-498

  Hattangady, S V ^a   Kraft, R ^a   Grider, D T ^a   Douglas, M A ^a   Brown, G A ^a   Tiner, P A ^a   Kuehne, J W ^a   Nicollian, P E ^a   Pas, M F ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BUDGET CONTROL; DIELECTRIC FILMS; GATE DIELECTRICS; NITROGEN; NITROGEN PLASMA; SILICA; TEMPERATURE; ULTRATHIN FILMS; ANNEALING; CAPACITORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION BOMBARDMENT; MOSFET DEVICES; NITRIDING; OXIDES; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

DIELECTRIC INTERFACE; GATE DIELECTRIC FILM; GATE ELECTRODES; LOWS-TEMPERATURES; NITROGEN PROFILE; PLASMA NITRIDATION; SIMPLE++; THERMAL; TOP GATE; ULTRA-THIN;

REFRACTORY METAL COMPOUNDS; DIELECTRIC FILMS;

DEPTH PROFILING ANALYSIS; GATE DIELECTRIC FILMS; GATE OXIDES; MOS CAPACITORS; NITRIDATION;

EID: 0030386820     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553846     Document Type: Conference Paper

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