MOS transistors with stacked SiO2-Ta2O5-SiO2 gate dielectrics for giga-scale integration of CMOS technologies

IEEE Electron Device Letters

Volumn 19, Issue 11, 1998, Pages 423-425

  Kizilyalli, I C ^a   Huang, R Y S ^a   Roy, P K ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LITHOGRAPHY; PERMITTIVITY; SILICA; THIN FILMS;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0032202781     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728900     Document Type: Article

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