Integration of ultrathin (1.6 - 2.0 nm) RPECVD oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 245-248

  Yang, Hanyang ^a   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; HYSTERESIS; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; OXYNITRIDE GATE DIELECTRICS; PLASMA NITRIDATION; REMOTE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; TUNNELING CURRENT;

GATES (TRANSISTOR);

EID: 0033332092     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)