Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 930-932

  Timp, G ^a   Agarwal, A ^a   Baumann, F H ^a   Boone, T ^a   Buonanno, M ^a   Cirelli, R ^a   Donnelly, V ^a   Foad, M ^a   Grant, D ^a   Green, M ^a   Gossmann, H ^a   Hillenius, S ^a   Jackson, J ^a   Jacobson, D ^a   Kleiman, R ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE CHANNEL LENGTH MEASUREMENT; SCANNING CAPACITANCE MICROSCOPY (SCM); TRANSCONDUCTANCE MEASUREMENT;

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON MICROSCOPY; ELLIPSOMETRY; GATES (TRANSISTOR); LEAKAGE CURRENTS; THICKNESS MEASUREMENT; TRANSCONDUCTANCE; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 84886447983     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)