CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 777-780

  Chatterjee, A ^a   Chapman, R A ^a   Joyner, K ^a   Otobe, M ^a   Hattangady, S ^a   Bevan, M ^a   Brown, G A ^a   Yang, H ^a   He, Q ^a   Rogers, D ^a   Fang, S J ^a   Kraft, R ^a   Rotondaro, A L P ^a   Terry, M ^a   Brennan, K ^a  

^a Silicon Technology Development   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; NITRIDING; PERMITTIVITY; PLASMA APPLICATIONS; TANTALUM COMPOUNDS;

METAL REPLACEMENT GATE TRANSISTORS; TANTALUM PENTOXIDE;

GATES (TRANSISTOR);

EID: 0032267117     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)