Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 23-26

  Manchanda, L ^a   Green, M L ^a   Van Dover, R B ^a   Morris, M D ^a   Kerber, A ^a   Hu, Y ^a   Han, J P ^a   Silverman, P J ^a   Sorsch, T W ^a   Weber, G ^a   Donnelly, V ^a   Pelhos, K ^a   Klemens, F ^a   Ciampa, N A ^a   Kornblit, A ^a   Kim, Y O ^a   Bower, J E ^a   Barr, D ^a   Ferry, E ^a   Jacobson, D ^a   Eng, J ^a   Busch, B ^b   Schulte, H ^b   more..

^a LUCENT TECHNOLOGIES   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

GATE DIELECTRIC MATERIALS;

CMOS INTEGRATED CIRCUITS;

EID: 0034454053     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904250     Document Type: Article

References (7)

1. The electronic structure of the atomic scale of ultra-thin gate oxides
2. 3 with low leakage and low interface states
3. 3 gate dielectrics with equivalent oxide thickness 0.5-1nm
4. Hafnium and zirconium silicates for advanced gate dielectrics
5. Assessment of complex metal oxides by composition-spread sputtering
6. Zirconium oxide based dielectrics with equivalent oxide thickness of less than 1.0nm